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N-Channel enhanced low threshold power Mosfet transistor 100-Volt 36-Amp integrated circuit in TO-220 case.
Specifications: Type of IRL540 transistor: MOSFET Type of control channel: N-Channel Maximum power dissipation (Pd): 125W Maximum drain-source voltage (Uds): 100V Maximum drain-gate voltage (Udg): Maximum gate-source voltage (Ugs): 64nC @ 5V Maximum drain current (Id): 36A Maximum junction temperature (Tj): 150°C Rise Time of IRL540 transistor (tr): Drain-source Capacitance (Cd), pf: Maximum drain-source on-state resistance (Rds), Ohm: 77 mOhm @ 17A, 5V Case of IRL540 transistor: TO-220
Reference:
Data East / Sega / Stern 110-0106-00
Data East / Sega 110-0088-00
Replaces STP20N10L
Replaces STP19N06L
5220-15710-00
XO-947
20N10L
P20N10L
P20N10
12N10L
Substitute for 22NE10L
IRL530
P40NE10L
Substitute for STP22NE10L
Substitute for P22NE10L
19N06L
NTE2987
NTE2396
