N-Channel enhanced low threshold power Mosfet transistor 100-Volt 20-Amp integrated circuit in TO-220 case. Specifications: Type of IRL540 transistor: MOSFET Type of control channel: N-Channel Maximum power dissipation (Pd): 125W Maximum drain-source voltage (Uds): 100V Maximum drain-gate voltage (Udg): Maximum gate-source voltage (Ugs): 64nC @ 5V Maximum drain current (Id): 24A Maximum junction temperature (Tj): 150°C Rise Time of IRL540 transistor (tr): Drain-source Capacitance (Cd), pf: Maximum drain-source on-state resistance (Rds), Ohm: 77 mOhm @ 17A, 5V Case of IRL540 transistor: TO-220