N-Channel enhanced low threshold power Mosfet transistor 100-Volt 20-Amp integrated circuit in TO-220 case.
Specifications:
Type of IRL540 transistor: MOSFET
Type of control channel: N-Channel
Maximum power dissipation (Pd): 125W
Maximum drain-source voltage (Uds): 100V
Maximum drain-gate voltage (Udg):
Maximum gate-source voltage (Ugs): 64nC @ 5V
Maximum drain current (Id): 24A
Maximum junction temperature (Tj): 150°C
Rise Time of IRL540 transistor (tr):
Drain-source Capacitance (Cd), pf:
Maximum drain-source on-state resistance (Rds), Ohm: 77 mOhm @ 17A, 5V
Case of IRL540 transistor: TO-220
Reference:
- Data East / Sega / Stern 110-0106-00
- Data East / Sega 110-0088-00
- Replaces STP20N10L
- Replaces STP19N06L
- 5220-15710-00
- XO-947
- 20N10L
- P20N10L
- P20N10
- 12N10L
- Substitute for 22NE10L
- IRL530
- P40NE10L
- Substitute for STP22NE10L
- Substitute for P22NE10L
- 19N06L
- NTE2987
- NTE2396
0.063
oz
