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CALIFORNIA WARNING: This product can expose you to chemicals, including lead and DEHP, which are known to the State of California to cause cancer and birth defects, or other reproductive harm. For more information, go to https://www.p65warnings.ca.gov.
N-Channel enhanced low threshold power Mosfet transistor 100-Volt 20-Amp integrated circuit in TO-220 case.
Specifications:
Type of IRL540 transistor: MOSFET
Type of control channel: N-Channel
Maximum power dissipation (Pd): 125W
Maximum drain-source voltage (Uds): 100V
Maximum drain-gate voltage (Udg):
Maximum gate-source voltage (Ugs): 64nC @ 5V
Maximum drain current (Id): 24A
Maximum junction temperature (Tj): 150°C
Rise Time of IRL540 transistor (tr):
Drain-source Capacitance (Cd), pf:
Maximum drain-source on-state resistance (Rds), Ohm: 77 mOhm @ 17A, 5V
Case of IRL540 transistor: TO-220
Reference:
Data East / Sega / Stern 110-0106-00
Data East / Sega 110-0088-00
5220-15710-00
XO-947
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IRF530
IRF540
IRF540N
Substitute for STP22NE10L
Substitute for P22NE10L
19N06L
NTE2987
NTE2396
Replaced by IRL540
